pvl_est_Rs_IEC60891_1
PVL_EST_RS_IEC60891_1 Estimate Rs using method 1 of IEC60891.
Contents
Syntax
Rs = pvl_est_Rs_IEC60891_1(IVCurves, aIsc, bVoc)
Description:
Method 1 in IEC60891 translates a point on an IV curve measured at irradiance G1 and cell temperature Tc1 to the corresponding point on an unobserved IV curve at irradiance G2 and cell temperature Tc2. The translation reduces the voltage value by a voltage drop across the ‘internal series resistance’ of the module ([IEC 60891], Eq. 2). A value for the resistance Rs is found by an iterative search over a set of IV curves measured at different irradiance levels and constant cell temperature: first, current for each IV curve is translated linearly to a common irradiance, then Rs is found by minimizing the variance of Pmp of the translated IV curves. The translation method assumes that irradiance variation among the IV curves is relatively small.
pvl_est_Rs_IEC60891_1 assumes that the IV curves are measured at, or have been translated to a common cell temperature.
Inputs:
- IVCurves - A structure array with the following fields:
- * IVCurves.Isc - short circuit current in amperes.
- * IVCurves.Voc - open circuit voltage in volts.
- * IVCurves.Imp - current at maximum power point in amperes.
- * IVCurves.Vmp - voltage at maximum power point in volts.
- * IVCurves.Pmp - power at maximum power point in watts.
- * IVCurves.V - vector of voltage in volts.
- * IVCurves.I - vector of current in amperes.
- * IVCurves.Ee - Effective irradiance (W/m2).
- * IVCurves.Tc - cell temperature (C).
- aIsc - temperature coefficient for short circuit current in A/C
- bVoc - temperature coefficient for open circuit voltage in V/C
Outputs:
- Rs - the series resistance value in ohms.
Example
clearvars % Set up parameters for a representative 60 cell cSi module using the Desoto model Const.q = 1.60218E-19; Const.k = 1.38066E-23; Const.E0 = 1000; Const.T0 = 25; param.aIsc = 0.0008; % A/C param.bVoc = -0.1900; % V/C param.Rs_ref = 0.2; param.Rsh_ref = 1000; param.IL_ref = 8.0; param.I0_ref = 5e-10; param.a_ref = 1.05 * 60 * Const.k/Const.q * (273.15 + Const.T0); EgRef = 1.121; dEgdT = -0.0002677; % Calculate set of IV curves Ee = 900:20:1100; Tc = 25; nPts = 100; for i=1:length(Ee) [IL, I0, Rs, Rsh1, nNsVth] = pvl_calcparams_desoto(Ee(i), Tc, param.aIsc, param, EgRef, dEgdT); IVcurves(i) = pvl_singlediode(IL, I0, Rs, Rsh1, nNsVth, nPts); end % Add Ee and Tc to IVcurves for i=1:length(Ee) IVcurves(i).Ee = Ee(i); IVcurves(i).Tc = Tc; end % Estimate Rs Rs = pvl_est_Rs_IEC60891_1(IVcurves, param.aIsc, param.bVoc)
Rs = 0.2159
References:
- [1] IEC60891 Ed. 2 2009. Procedures for temperature and irradiance corrections to measured I-V characteristics of crystalline silicon photovoltaic (PV) devices.
- [2] C. Hansen and B. King, "Determining series resistance for equivalent circuit models of a PV module", in 45th IEEE Photovoltaic Specialist Conference, Waikoloa, HI, 2018.
See also
pvl_est_kappa_IEC60891_1, pvl_translate_IV_curve_IEC60891_1
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