pvl_calcparams_PVsyst

Calculates five parameters to compute IV curves using the PVsyst model.

Contents

Syntax

[IL, I0, Rs, Rsh, nNsVth] = pvl_calcparams_PVsyst(S, Tcell, alpha_isc, ModuleParameters)
[IL, I0, Rs, Rsh, nNsVth] = pvl_calcparams_PVsyst(S, Tcell, alpha_isc, ModuleParameters)
[IL, I0, Rs, Rsh, nNsVth] = pvl_calcparams_PVsyst(S, Tcell, alpha_isc, ModuleParameters, Sref)
[IL, I0, Rs, Rsh, nNsVth] = pvl_calcparams_PVsyst(S, Tcell, alpha_isc, ModuleParameters, Sref, Tref)
[IL, I0, Rs, Rsh, nNsVth] = pvl_calcparams_PVsyst(S, Tcell, alpha_isc, ModuleParameters, 'Sref', Sref, 'Tref', Tref)

Description

Applies the PVsyst model [1, 2, 3] to calculate the five parameters for IV curves.

Inputs

Output:

Example 1

IV curves at a range of irradiance values

Ee = [200 400 600 800 1000 1100]; % effective irradiance Levels (W/m^2) for parameter sets
Tcell = 45; %deg C

% Notional cSi module
Module.gamma_ref=1.1;
Module.mugamma=-0.0003;
Module.IL_ref=5.5;
Module.I0_ref=2.2e-9;
Module.Rsh_ref=2000;
Module.Rsh0=8700;
Module.Rshexp=5.5;
Module.Rs_ref=0.33;
Module.eG=0.95;
Module.Ns=60;
aIsc=-0.002;

[IL, I0, Rs, Rsh, a] = pvl_calcparams_PVsyst(Ee, Tcell, aIsc, Module);
NumPoints = 1000;
[IVResult] = pvl_singlediode(IL, I0, Rs, Rsh, a, NumPoints);

figure
for i=1:6
plot(IVResult.V(i,:),IVResult.I(i,:))
hold on
scatter(IVResult.Vmp(i),IVResult.Imp(i),'filled')
text(2,IVResult.Isc(i)+0.3,[num2str(Ee(i)) ' W/m^2'])
end
xlabel('Voltage (V)')
ylabel('Current (A)')
title('Example IV Curve from PVsyst Single Diode Model','FontSize',14)
ylim([0 8])
xlim([0 37])

Example 2

IV curves at a range of cell temperature values and at AM = 3

S = 1000; %broadband irradiance Levels for parameter sets
Tcell = [30 40 50 60 70 80]; %deg C
AMa = 3; % Absolute (pressure corrected) airmass

% Bandgap and Bandgap temperature dependence from [2]
EgRef = 1.121; %Reference band gap.
C = -0.0002677;  %Band gap dependence on temperature.

% Representative coefficients for estimating M/Mref for Poly-crystalline Si
% From Table A.1 in [1].
M = polyval([-0.000126 0.002816 -0.024459 0.086257 0.918093], AMa);

Ee = S.*M;

[IL, I0, Rs, Rsh, a] = pvl_calcparams_PVsyst(Ee, Tcell, aIsc, Module);
NumPoints = 1000;
[IVResult] = pvl_singlediode(IL, I0, Rs, Rsh, a, NumPoints);


figure
for i=1:6
plot(IVResult.V(i,:),IVResult.I(i,:))
hold on
scatter(IVResult.Vmp(i),IVResult.Imp(i),'filled')

end
xlabel('Voltage (V)')
ylabel('Current (A)')
title('IV Curves (Cell Temp from 30-80 deg C','FontSize',14)
ylim([0 8])

References

[1] K. Sauer, T. Roessler, C. W. Hansen, Modeling the Irradiance and Temperature Dependence of Photovoltaic Modules in PVsyst, IEEE Journal of Photovoltaics v5(1), January 2015.

[2] A. Mermoud, PV modules modelling, Presentation at the 2nd PV Performance Modeling Workshop, Santa Clara, CA, May 2013.

[3] A. Mermoud, T. Lejeune, Performance Assessment of a Simulation Model for PV modules of any available technology, 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, Sept. 2010.

See also

pvl_singlediode

Copyright 2015 Sandia National Laboratories